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H5N2306PF
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0031-0200Z Rev.2.00 Jun.25.2004
Features
* Low on-resistance * Low leakage current * High speed switching
Outline
TO-3PFM
D
G 1 S 1. Gate 2. Drain 3. Source
2
3
Rev.2.00, Jun.25.2004, page 1 of 9
H5N2306PF
Absolute Maximum Rating
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 230 30 30 160 30 160 15 60 2.08 150 -55 to +150 Rating V V A A A A A W C/W C C Unit
Avalanche current IAP Note3 Channel dissipation Pch Note2 Channel to case thermal impedance ch-c Channel temperature Tch Storage temperature Tstg Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. STch = 25C, Tch 150C
Rev.2.00, Jun.25.2004, page 2 of 9
H5N2306PF
Electrical Characteristics
(Ta = 25C)
Item Drain to Source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on deray time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr Min 230 -- -- 2.5 19 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 32 0.041 3500 480 40 45 110 125 80 70 17 24 0.9 170 1.0 -- 1 0.1 4.0 -- 0.052 -- -- -- -- -- -- -- -- -- -- 1.4 -- -- Max V A A V S pF pF pF ns ns ns ns nC nC nC V ns C Unit Test condition ID = 10 mA, VGS = 0 VDS = 230 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 15 A, VDS = 10 V Note4 ID = 15 A, VGS = 10 VNote4 VDS = 25 V VGS = 0 f = 1 MHz ID = 15 A VGS = 10 V RL = 6.7 Rg = 10 VDD = 160 V VGS = 10 V ID = 30 A IF = 30 A, VGS = 0 Note4 IF = 30 A, VGS = 0 diF/dt = 100 A/s
Rev.2.00, Jun.25.2004, page 3 of 9
H5N2306PF
Main Characteristics
Power vs. Temperature Derating 80 1000 300 Maximum Safe Operation Area
Pch (W)
ID (A)
60
100 30 10 3 1 0.3 Operation in 0.1 this area is
PW
10
1
= 10 m
m
10
s
s
0
Channel Dissipation
Drain Current
40
(T
s( O c = pe 1sho ra 25 tio t) C n )
DC
s
20
limited by RDS(on)
0
50
100
150 Tc (C)
200
Case Temperature
0.03 Ta = 25C 0.01 0.1 0.3 1 3 10 30 100 300 1000 Drain to Source Voltage VDS (V)
Typical Output Characteristics 100 10 V 7V 8V Pulse Test 6.5 V 80 100
Typical Transfer Characteristics V DS = 10 V Pulse Test
ID (A)
80
60
ID (A) Drain Current
6V
60
Drain Current
40 5.5 V 20 VGS = 5 V 0 4 8 12 Drain to Source Voltage 16 20 VDS (V)
40
20
Tc = 75C 25C
-25C 8 10 VGS (V)
0
2 4 6 Gate to Source Voltage
Rev.2.00, Jun.25.2004, page 4 of 9
H5N2306PF
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage VDS(on) (V)
Pulse Test
1.6 I D = 30 A 1.2
Drain to Source on State Resistance RDS(on) ()
2
Static Drain to Source on State Resistance vs. Drain Current 1 Pulse Test VGS = 10 V,15V 0.3
0.1
0.8
15 A
0.4 5A 0 12 4 8 Gate to Source Voltage 16 VGS (V) 20
0.03
0.01 1 2 10 20 100 300 Drain Current ID (A) 1000
Static Drain to Source on State Resistance RDS(on) ()
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance vs. Temperature 0.2 Pulse Test 0.16 VGS = 10 V
Forward Transfer Admittance vs. Drain Current 100 50 20 10 5 2 1 0.5 0.2 0.1 0.1 0.3 1 3 10 V DS = 10 V Pulse Test 30 100 300 1000 ID (A) 75C 25C Tc = -25C
0.12
ID = 30 A 15 A
0.08 5A 0.04 0 -25
0 25 50 75 100 125 150 Case Temperature Tc (C)
Drain Current
Rev.2.00, Jun.25.2004, page 5 of 9
H5N2306PF
Body-Drain Diode Reverse Recovery Time
10000 5000
1000
Reverse Recovery Time trr (ns)
Typical Capacitance vs. Drain to Source Voltage Ciss
500
Capacitance C (pF)
2000 1000 500
200 100 50
Coss
200 100 50
20
10 0.1 0.3 1 3 10 30 100 300 1000 Reverse Drain Current IDR (A)
di / dt = 100 A / s V GS = 0, Ta = 25C
20 10
VGS = 0 f = 1 MHz 0
Crss
50 100 150 Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
VDS (V) VGS (V)
400
I D = 30 A V DS = 160 V 100 V 50 V
VGS
16
10000
Switching Characteristics V GS = 10 V, V DD = 100 V PW = 5 s, duty 1% R G = 10
300
12
Gate to Source Voltage
Switching Time t (ns)
Drain to Source Voltage
1000
tf td(off)
tr
200
VDD
8
100
100
V DS = 160 V 100 V 50 V 20 40 60 80
4
td(on)
0
0 100
tr 10 0.1 0.3
Gate Charge
Qg (nC)
1 3 10 30 100 300 1000 Drain Current ID (A)
Rev.2.00, Jun.25.2004, page 6 of 9
H5N2306PF
Reverse Drain Current vs. Source to Drain Voltage
Gate to Source Cutoff Voltage VGS(off) (V)
Gate to Source Cutoff Voltage vs. Case Temperature 5 4 V DS = 10 V I D = 10 mA 1 mA 3 2 0.1 mA
100
IDR (A) Reverse Drain Current
80
60
40 10 V 5V V GS = 0 V
20
1 0 -25
Pulse Test 0 0.4 0.8 1.2 1.6 VSD (V) 2.0 Source to Drain Voltage
0
25
50
75 100 125 150 Tc (C)
Case Temperature
Switching Time Test Circuit Vin Monitor D.U.T. RL 10 Vin 10 V V DD = 100 V Vin Vout 10% 10% Vout Monitor
Waveform
90%
10% 90% td(off) tf
90% td(on) tr
Rev.2.00, Jun.25.2004, page 7 of 9
H5N2306PF
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25C 1 D=1 0.5
0.2
0.3 0.1
0.1
0.05
0.03 0.01
0.02 0.01
1 tp sho
ch - c(t) = s (t) * ch - c ch - c = 2.08C/W, Tc = 25C
uls e
PDM PW T
D=
PW T
0.003 0.001 10
100
1m
10 m Pulse Width
100 m PW (s)
1
10
100
Rev.2.00, Jun.25.2004, page 8 of 9
H5N2306PF
Package Dimensions
As of January, 2003
Unit: mm
5.0 0.3
15.6 0.3
0.4 3.2 + 0.2 -
5.5 0.3
5.0 0.3 19.9 0.3
2.0 0.3
2.7 0.3
0.66 5.45 0.5
+ 0.2 - 0.1
21.0 0.5
4.0 0.3 2.6 0.86
3.2 0.3 1.6 0.86
0.2 0.9 + 0.1 -
5.45 0.5
Package Code JEDEC JEITA Mass (reference value)
TO-3PFM -- -- 5.2 g
Ordering Information
Part Name Quantity Shipping Container H5N2306PF-E 30 pcs Plastic magazine Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00, Jun.25.2004, page 9 of 9
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501 Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900 Renesas Technology Europe GmbH Dornacher Str. 3, D-85622 Feldkirchen, Germany Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11 Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2375-6836 Renesas Technology Taiwan Co., Ltd. FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001
http://www.renesas.com
(c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
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